PhD student in next generation GaN for Microwave Electronics
Chalmers Tekniska Högskola AB / Högskolejobb / Göteborg
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hela Sverige Visa alla jobb hos Chalmers Tekniska Högskola AB i Göteborg Be part of the rapid development of the disruptive GaN semiconductor technology used in high performing telecommunication as well as radar systems. We are now looking for a new team member to join us in our efforts in exploring ultimate limitations in materials, devices concepts and circuits based on GaN. The research is carried out i close collaboration with world leading GaN electronics industries.
Information about the division and the department
The Microwave Electronics Laboratory (MEL) at the Department of Microtechnology and Nanoscience employs more than 40 people performing world-class research on high speed electronic components, circuits, and systems for a wide range of communication and sensing applications in the frequency range from 1 GHz to 500 GHz and beyond. Our facilities include a uniquely well-equipped laboratory for advanced millimeter wave measurements and a state-of-the art cleanroom facility.
A major part our research is targeting new semiconductor materials and devices to enable higher capacity and improved energy efficiency in a wide range of future microwave and millimeter systems.In recent years, electronic devices and circuits based on wide bandgap semiconductors such as SiC and III-nitrides (GaN) have demonstrated disruptive performance in terms of frequency, power, and efficiency figure of merits. We have been and are participating in key European research initiatives that continuously drive the development of the technology. Our research in GaN HEMT technology target application within wireless communication and radar systems, as well as power electronics.
Major responsibilities
Be part of the rapid development of the disruptive GaN semiconductor technology used in high performing telecommunication as well as radar systems. This PhD student position will focus on research on III-nitride devices and circuits for high frequency applications. We will explore new concepts in III-nitride semiconductor material and device processing to optimize different important properties, such as high frequency operation, output power, linearity, and efficiency in close collaboration with leading actors in Europe. The goal is to explore the limitations of III-nitride semiconductor devices in terms of epitaxial design and growth, device concepts, process compatibility, and circuit design.
The research will include a wide range of activities such as advanced device characterization, modeling, as well as circuit design. You will perform extensive experimental and theoretical investigations to understand the fundamental and practical limits of high frequency electronics based on III-nitride semiconductors. You will use our advanced characterization facilities to connect theoretical predictions with experimental verification.
You will be a member in a team of other PhD students and senior researchers, both from industry and academia, working with semiconductor technology development, circuit design, and realization of complete wireless system demonstrators. You will mainly perform research combined with some teaching and collaborative activities with partners. A PhD student position at Chalmers typically consists of 4 years of research and courses plus 1 year of departmental work (teaching, external projects etc.)
Qualifications
To qualify, you should hold a MSc degree in engineering physics or electrical engineering (or equivalent), generally not older than two years. Experiences in semiconductor processing in cleanrooms and device characterization are meritorious. Well-documented capability of communicating in English, both spoken and written, are required.
Important qualities are enthusiasm, to be able to drive and conclude projects independently, take own initiatives and discuss/develop own ideas, be creative and have a problem-solving mindset. The project is in collaboration with other researchers and industry. Therefore, excellent cooperation and social abilities are important.
To qualify as a PhD student, you must have a master's level degree corresponding to at least 240 higher education credits in a relevant field.
The position requires sound verbal and written communication skills in English. If Swedish is not your native language, Chalmers offers Swedish courses.
Contract terms
Full-time temporary employment. The position is limited to a maximum of five years.
For more information about what we offer and the application procedure, please visit Chalmers webpage.
See link: PhD student in next generation GaN for Microwave Electronics
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Så ansöker du Sista dag att ansöka är 2023-10-30
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Arbetsgivare Chalmers Tekniska Högskola AB (org.nr 556479-5598)
Jobbnummer 8158365
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