Postdoc in GaN based electronics for high frequency and power applications
Chalmers Tekniska Högskola AB / Högskolejobb / Göteborg
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hela Sverige Visa alla jobb hos Chalmers Tekniska Högskola AB i Göteborg Research in electronics in based on new semiconductors offers challenges in several thrilling areas. We are now looking for a new team member to join us in our efforts in exploring ultimate limitations in materials, devices concepts and processing of transistors based on III-nitrides.
Information about the division and the department
The Microwave Electronics Laboratory (MEL) at the Department of Microtechnology and Nanoscience employs more than 40 people performing world-class research on high speed electronic components, circuits, and systems for a wide range of communication and sensing applications in the frequency range from 1 GHz to 500 GHz and beyond. Our facilities include a uniquely well-equipped laboratory for advanced millimeter wave measurements and a state-of-the art cleanroom facility.
A major part our research is targeting new semiconductor materials and devices to enable higher capacity and improved energy efficiency in a wide range of future microwave and millimeter systems. In recent years, electronic devices and circuits based on wide bandgap semiconductors such as SiC and III-nitrides (GaN) have demonstrated disruptive performance in terms of frequency, power, and efficiency figure of merits. We will now investigate advanced device concepts to further harvest the potential of III-nitride devices and circuits. Our research in GaN HEMT technology target application within wireless communication and radar systems, as well as power electronics.
Major responsibilities
This post doc position will focus on research on III-nitride devices and circuits for high frequency applications. We will explore new concepts in III-nitride semiconductor material and device processing to optimize different important properties, such as high frequency operation, output power, linearity, and efficiency, all of importance in high frequency systems. The goal is to push the limits of III-nitride semiconductor devices. New epitaxial designs grown in-house with molecular beam epitaxy or by our collaborative partners. A specific type of transistors, high electron mobility transistors, HEMTs, will processed as well as characterized and evaluated . The goal to optimize high frequency performance will involve both aggressive lateral and vertical down-scaling of important transistor features.
The research will include a wide range of activities such as epitaxial design, device processing, and characterization. You will perform extensive experimental and theoretical investigations to understand the fundamental and practical limits of high frequency electronics based on III-nitride semiconductors. You will use our advanced device processing and advanced characterization facilities to connect theoretical predictions with experimental verification.
You will be a member in a team of PhD students and senior researchers, both from industry and academia, working with semiconductor technology development, circuit design, and realization of complete wireless system demonstrators. You will mainly perform research and supervision combined with some collaborative activities with our partners. This postdoc position is a full-time, temporary employment for 2-3 years.
Qualifications
To qualify, you should hold a PhD degree in physics or electrical engineering (or equivalent), generally not older than three years. Experiences in semiconductor processing in cleanrooms and device characterization are meritorious. Well-documented capability of communicating in English, both spoken and written, are required.
Important qualities are enthusiasm, to be able to drive and conclude projects independently, take own initiatives and discuss/develop own ideas, be creative and have a problem-solving mindset. The co-supervision of master thesis projects and PhD-students is an important task for this position. The project is in collaboration with other researchers and industry. Therefore, excellent cooperation and social abilities are important
Contract terms
This postdoc position is a full-time temporary employment for two to three years.
We offer
Chalmers offers a cultivating and inspiring working environment in the coastal city of Gothenburg.
Read more about working at Chalmers and our benefits for employees.
Chalmers aims to actively improve our gender balance. We work broadly with equality projects, for example the GENIE Initiative on gender equality for excellence. Equality and diversity are substantial foundations in all activities at Chalmers.
Application procedure
The application should be marked with Ref 20230517 and written in English. The application should be sent electronically and be attached as PDF-files, as below. Maximum size for each file is 40 MB. Please note that the system does not support Zip files.
CV: (Please name the document as: CV, Surname, Ref. number) including:
• CV, include complete list of publications
• Previous teaching and pedagogical experiences
• Two references that we can contact.
Personal letter: (Please name the document as: Personal letter, Family name, Ref. number)
1-3 pages where you:
• Introduce yourself
• Describe your previous research fields and main research results
• Describe your future goals and future research focus
Other documents:
• Attested copies of completed education, grades and other certificates.
Use the button at the foot of the page to reach the application form.
Application deadline: 2023-10-11
For questions, please contact:
Research professor Niklas Rorsman, Microtechnology and nanoscience,
niklas.rorsman@chalmers.se, +46 31 7725053
• ** Chalmers declines to consider all offers of further announcement publishing or other types of support for the recruiting process in connection with this position. ***
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Så ansöker du Sista dag att ansöka är 2023-10-11
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Arbetsgivare Chalmers Tekniska Högskola AB (org.nr 556479-5598)
Jobbnummer 8098557
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